Description

Students visited the laboratories which were equipped with advanced facilities for Nano-fabrication, Crystal growth and epitaxy, including Electron Beam Lithography, Focused Ion Beam, III-As/N/Sb & II-VI MBEs, III-N/As MOCVDs etc. All the students were divided into two groups and sent for the visit of SiC (Silicon Carbide) wafer and GaAs (Gallium Arsenide) crystal growth sub-laboratories of the SSPL. In addition to lab visits, products and achievements of SSPL DRDO were also shown to the students via a video lecture. The visit was very successful and it was a good learning experience for the students.